Dynamic Characteristics of Radiation Defects in Silicon

Using the internal friction method the reorientation and annealing of defects in neutron-irradiated silicon are examined; silicon self-interstitials (Sii+ and Sii0), interstitial carbon (Ci), and many-vacancy complexes including oxygen atoms (O + MVC). The annealing of all the defects is described by a second-order equation of the chemical reaction rate. Disappearance of Sii0 occurs with E = 1.40 eV and K0 = 4 × 1011 s−1, of (O + MVC) with E = 2.16 eV and K0 = 3.2 × 1010 s−1.