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The role played by the dynamics of the interband polarization for the correct description of the generation of carriers by a short laser pulse is investigated. The calculations are based on the semiconductor Bloch equations which are solved by means of a generalized Monte Carlo simulation. It turns out that some of the approaches commonly used for a microscopic modelling of the dephasing process fail in describing correctly the effect of carrier‐carrier interaction in the low‐density limit. By including terms which have the structure of “in‐scattering” terms (vertex corrections) for the interband polarization, the experimentally observed features in the carrier dynamics are well reproduced in the whole density range.
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Kühn et al. (1995) studied this question.
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