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States due to imperfections at or near surfaces of semiconductors in liquid junction solar cells can be identified by changes in the photoresponse spectra under short‐circuit current conditions. These effects become dominant features in two‐beam experiments with an intense pumping (laser) source and a weak modulated probing beam. The presence of these states can be correlated with drastic decreases in short‐circuit currents, open‐circuit voltages, fill factors, and maximum power conversion efficiencies of the cells. Elimination of the damaged surface regions by suitable etching allows AM2 solar conversion efficiencies of 1.3 and 7.2%, respectively, in the cells and .
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Heller et al. (1977) studied this question.
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