Integration of Self-Assembled Vertically Aligned Nanocomposite (La0.7Sr0.3MnO3)1–x:(ZnO)x Thin Films on Silicon Substrates

Epitaxial (La0.7Sr0.3MnO3)(1-x):(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.