The response times of nonresonant p-Ge detectors and of resonant photon-drag detectors made from AlxGa1−xAs/GaAs multiquantum well systems are measured with intense 300-ps optical pulses of 10-μm wavelength generated with the aid of an improved laser system based on optical free induction decay. A response time limited by the oscilloscope-amplifier bandwidth is reached with the quantum well systems. Their response time is shorter than that of a p-Ge photon-drag detector. The light-pulse traveling time limits the performance of the large p-Ge photon-drag detectors.
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Kesselring et al. (1992) studied this question.
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