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Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source, Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Sylvester, Dennis, Heng, Chun-Huat, Samudra, Ganesh S., Yeo, Yee-Chia
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Toh et al. (2008) studied this question.
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