We derive the ratio of transport and single-particle relaxation times in three- and two-dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both three- and two-dimensional electron transport.
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Jena et al. (2002) studied this question.
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