We investigate the influence of avalanche multiplication by impact ionization on the photoconductive gain and the noise gain in quantum-well infrared photodetectors (QWIPs). A quantitative method is presented allowing the avalanche multiplication factor M and its field dependence to be determined from the measured photoconductive gain and noise gain. The approach is demonstrated using an In0.30Ga0.70As/GaAs QWIP.
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Rehm et al. (2003) studied this question.
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