Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe

The growth rate of ZnSe in organometallic vapor-phase epitaxy (OMVPE) using dimethylzinc (DMZ) and dimethylselenide (DMSe) as the source materials was substantially increased by irradiation from a xenon lamp. The growth temperature was reduced from 500°C to 300°C by keeping a constant growth rate of 1∼2 µm/h. Promotion of surface reaction due to irradiation was considered as one of the factors for the growth rate enhancement. The density of defects which causes deep level emissions was also successfully reduced. We suggest that this technique is very effective to obtain high-quality epilayers.