Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current–voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacitance–voltage characteristics. This result suggests that additional acceptors which are not related to boron, exist in the as-grown film and disappear after oxidation.
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Kiyota et al. (1995) studied this question.
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