We succeeded in the growth of a hillock-free heavily boron-doped diamond (001) film with a boron concentration of 6×10 20 atoms/cm 3 , being an ideal bottom layer for diamond electronic devices. The growth of hillocks was suppressed using diamond (001) substrates with misorientation angles of around 2°. The suppression could be achieved by the enhanced lateral growth on high-θ substrates.
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Tokuda et al. (2007) studied this question.
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