This letter reports the first CW operation of silicon TRAPATT diodes in the microwave region. In particular, CW operation of silicon diodes, using room temperature heat sinking, has been obtained from 2.5 to 4.0 GHz. The maximum power output achieved thus far has been 3.0 watts and the maximum efficiency has been 20 percent.
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Evans et al. (1970) studied this question.
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