Self-consistent band-edge deformation potentials in a tight-binding framework

In a recent work [Phys. Rev. B 37, 8519 (1988)], we have shown how it is possible to derive a ``universal analytical expression'' for the dependence of tight-binding parameters upon distance that provides, for seven III-V compounds, deformation potentials in reasonable agreement with available experimental data. This work corresponded to non-self-consistent calculations. As the tight-binding treatment of strained heterojunctions like InAs/GaAs requires a self-consistent description of deformation potentials, here we study the effect of self-consistency for hydrostatic and uniaxial [100] strains.