Photoluminescence studies of the Mn2+ d-levels in Cd1−xMnxTe

We report on the evidence from photoluminescence measurements of the relative positions of the localized d-levels of the Mn2+ ions with respect to the conduction and valence bands of Cd1−xMnxTe. The results indicate that the ground state 6S is approximately 0.8 eV inside the valence band for all compositions up to x=0.7. The first excited state 4G is deep inside the gap, and it represents an energy level that may substantially affect the lifetime and recombination characteristics of the carriers in the Cd1−xMnxTe system.