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InGaN/GaN light‐emitting diodes (LEDs) are known to exhibit a strongly non‐uniform vertical carrier distribution within the multi‐quantum well (MQW) active region. We propose to eliminate “dark” quantum wells by insertion of multiple tunnel junctions into the MQW which allow for the repeated use of electrons and holes for photon generation. In good agreement with available measurements, we demonstrate by self‐consistent numerical simulation that such tunnel junction LED design promises quantum efficiencies as high as 250% as well as a strongly enhanced output power at high input power, compared to conventional LED concepts. magnified image Energy band diagram and photon emission rate for the proposed LED with four sets of two quantum wells separated by three tunnel junctions. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Joachim Piprek (2014) studied this question.
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