Measurement of electron impact ionization coefficient in bulk silicon under a low-electric field

The electron impact ionization coefficient, αn, in bulk silicon, was extracted using a new method that is applicable for the low-electric fields. In this method, αn can be simply estimated from the multiplication factor of an n-type static induction transistor, and a structurally determined depletion layer thickness. Values of αn, as low as 1×10−4 cm−1, have been obtained at 300 and 77 K, and they agreed approximately with previously reported data that covered relatively high electric fields.