Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model

We have characterized the diffusion of Zn into GaAs from the organometallic sources diethylzinc and trimethylarsenic. This method produces surface hole concentrations in excess of 1020 cm−3 with good control of junction depths as shallow as 0.1 μm. Smooth surface morphology is retained. The profile shape is much more complex than the accepted interstitial-substitutional Zn-diffusion model would predict. To explain the observed profiles, a new model for Zn diffusion is proposed and implemented in a computer simulation.