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Photoluminescence coupled with repetitive thermal annealing has been used to study the interdiffusion process in a 10 nm GaAs1−xSbx/GaAs single quantum well. The diffusion equations and the Schrödinger equation were solved numerically to obtain the composition profile and the n=1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick’s second law.
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Khreis et al. (1998) studied this question.
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