Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7–450K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6cm∕s is measured at 300K. Lift-off processing inhibits but does not preclude laser cooling of GaAs.
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Imangholi et al. (2005) studied this question.
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