Electrically injected InGaAs/GaAs photonic crystal membrane light emitting microcavity with spatially localized gain

Electrically injected photonic crystal membrane light emitting microcavities with spatially localized optical gain are reported. The localization of the InGaAs quantum well inside the defect cavity of the photonic crystal allows for efficient coupling of the optical mode to the gain medium and reduces nonradiative carrier recombination. The use of a buried oxide layer under the semiconductor membrane enables optical and electrical confinement and a submicron diameter oxide aperture provides a current path. Enhancement of the electroluminescence intensity is observed as a result of the spatial localization of the quantum well, and the spectral characteristics at room temperature indicate the photonic crystal microcavity confinement.