Band-to-band Auger recombination in silicon based on a tunneling technique. I. Theory

Band-to-band Auger recombination in n+-type silicon is investigated. A new experimental approach for determining the band-to-band Auger coefficient that is based on the hot electrons generated in the recombination process is proposed and theoretically analyzed. Because this method is not sensitive to trap-assisted Auger recombination, or other types of recombination, it can yield information regarding the fundamental lifetime limits in heavily doped silicon. Experimental results are presented in a companion paper, Part II.