We investigate the effect of built-in spontaneous and piezoelectric polarization on the internal device physics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with strained InGaN quantum wells. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an indium-tin-oxide current injection layer. Contrary to common perception, we show: 1) that only a small fraction of the built-in quantum-well polarization is screened at typical injection current densities and 2) that the polarization of the AlGaN electron stopper layer has a strong effect on the VCSEL threshold current which can be partly compensated for by higher p-doping.
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Piprek et al. (2005) studied this question.
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