Interference oscillation observed in X-ray total external reflection from thin films was analyzed by the Fourier transform algorithm. The peak position in Fourier space was in good agreement with the layer thickness, and was determined independently from the surface/interface roughness. The principle of the present technique and its application to SiO2/Si thin films are shown. The advantages of the experiments using tunable synchrotron X-rays are also discussed.
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Kenji Sakurai Iida (1992) studied this question.
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