Field-dependent electronic noise of lightly dopedp-type Si at 77 K

A theoretical investigation and experiments on the noise spectra of lightly doped p-type Si (boron) at 77 K are presented. Noise spectra in the high-frequency range 0.22{≤}f{≤}10.5 GHz have been measured at different electric fields 100{≤}E{≤}2500 V/cm for two acceptor concentrations NA of 4×{}10¹⁴ and 3×{}10¹⁵ cm^-3. The experimental results are interpreted within a Monte Carlo simulation, which includes at a microscopic level the mechanism of generation and recombination from impurity centers. The different sensitivity on the parameters in fitting first- and second-order transport coefficients is shown to provide a formidable check to support the physical plausibility of the model used.