As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (Lg) are scaled to lengths shorter thanLgLg<; 8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON-state currents in ultrascaled nanowire MOSFETs.
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Mehrotra et al. (2013) studied this question.
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