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The photoelectrochemical properties of In x Ga1-x N (x=0.02 and 0.09) were compared with those of GaN. The band-edge potentials of In x Ga1-x N were determined by the Mott–Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.
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Fujii et al. (2005) studied this question.
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