Cl2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna

We demonstrated the inductively coupled plasma (ICP) etching of InP using two-turn coil placed in process chamber as an internal antenna. It is found that the internal antenna well confines the plasma inside the coil. In addition, the result shows that the ion density in the internal antenna is higher than that in the external antenna at the same input power, and the etching rate with an internal antenna plasma of 100 W is almost the same as that with an external antenna plasma of 300 W. The ICP etching using the internal antenna will be an effective technique for high-speed etching and electric power saving.