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We compared several kinds of etching gases in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma etching processes for investigating the etching performance. It was found that a heavy etching gas such as SiCl4 plays an important role for smooth etching of InP, which is independent of ICP and ECR plasma sources.
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Matsutani et al. (2001) studied this question.
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