High-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors

Waveguide photodetectors integrated with graphene have demonstrated potential for ultrafast response and broadband operation. Here, we demonstrate high-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors by enhancing the absorption of light propagating in the transverse-magnetic mode through a metal-graphene junction. A doubling in responsivity is experimentally observed. In our zero-biased metal-graphene junction, a 15 mA W−1 intrinsic responsivity and a 30 GHz bandwidth are achieved at ∼1550 nm. The results are comparable to those obtained from the best pristine graphene-based photodetectors. Our work enables new architectures for high-performance optoelectronic devices based on the graphene-on-silicon nitride platform.