We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl 2 gasses at a low process temperature of 90°C. We measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. We consider that HI/Cl 2 -ICP etching is useful in InP-based device fabrication with a resist mask.
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Matsutani et al. (2003) studied this question.
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