Current-induced magnetization switching (CIMS) in low resistance tunnel junctions is reported at critical current densities of 1.9×106 A/cm2 for tunnel junction areas ranging from 2 to 3 μm2, and junction resistances from 6 to 20 Ω μm2. Typical tunnel magnetic resistance values for these junctions range from 15% to 21% (measured in an external magnetic field) and 10% to 14% resistance changes are obtained by CIMS. Micromagnetic simulation indicates that vortex fields and spin transfer effects cannot fully account for the observed current-induced switching. Although able to explain the observed transition from a parallel or antiparallel state to a vortex state, it fails to explain the switch back to the original state, at a comparable but symmetrical critical current density.
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Liu et al. (2003) studied this question.
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