Fabrication of Fully Transparent Indium-Doped ZnO Nanowire Field-Effect Transistors on ITO/Glass Substrates

Fully transparent indium (In)-doped ZnO nanowire field-effect transistors were prepared on a patterned ∕indium tin oxide /glass substrate by reactive evaporation. A crabwise In-doped ZnO nanowire is adopted in photodetectors, with a photocurrent to dark current contrast ratio of only 24.1. Crabwise In-doped ZnO nanowire field-effect transistors performed excellently with a mobility of . The ability to tune n-type conduction and the understanding of the transport properties of crabwise In-doped ZnO nanowires together represents an important step toward the development of ZnO nanowire-based electronic and photoelectronic devices.