Heterostructures with biaxially compressed InAsSb are being considered as active regions for midwave infrared diode lasers. Quantum wells of biaxially compressed InAs1−xSbx (x≊0.09) in unstrained InAs were characterized using magnetophotoluminescence. The quantum size shift of the photoluminescence for a series of quantum wells produced an estimate of the conduction band offset. In magnetic field studies, the holes in the strained quantum wells exhibited a decrease in effective mass, approaching that of the electrons. A type I band offset was observed for these InAsSb/InAs heterostructures. Throughout this study, magnetoexcitonic behavior is observed; our analysis indicates that the exciton binding energy increases with quantum confinement.
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Kurtz et al. (1995) studied this question.