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A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.
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Tseng et al. (2010) studied this question.
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