Schottky junctions on n‐type InP for zero bias microwave detectors

Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2 + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current–voltage (I–V) and capacitance–voltage measurements in the temperature range of 80–320 K. The I–V characteristics are evaluated for both thermionic emission (TE) and thermionic-field emission theory. It is shown that at low temperatures even the field emission dominates the current in a given bias range. The barrier heights obtained for TE from the I–V measurements are in the range of 0.38–0.49 eV with ideality factors of 1.08–1.24. It is concluded that the junctions can be used for zero bias detector purposes.