Photoabsorption and photoelectric process in Si nanocrystallites

Using the effective mass approximation, we investigate the photoabsorption and photoelectric process in the conduction band of a single electron charged spherical Si semiconductor quantum dot nanostructure embedded in the amorphous SiO2 matrix. We consider the potential barrier at the interface as of (i) infinite and (ii) finite heights. The effect of self-energy associated with surface polarization due to the charging of the quantum dot is also considered. Our results of photoabsorption coefficient for (1s-1p) transition are found to be in good agreement with the available experimental data.