GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/8 ML InAs/GaSb SL active layer are fabricated with a pixel area of 800 × 800 μm 2 without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05 μm at 77 K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10 9 cm·Hz 1/2 /W at 77 K and 2 × 10 8 cm·Hz 1/2 /W at 300 K, respectively.