Single wavelength reflectance difference anisotropy (RDA) has been used to study the kinetics of the self-assembly of Ga atom chains on faceted Si(112) surfaces. The formation of the chains is followed from the initial deposition through changes in the surface reconstruction from (5×1) to (6×1). We present a simple Monte Carlo model to account for the time evolution of the RDA signal as a function of temperature and experimentally determined kinetic parameters.
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Glembocki et al. (1997) studied this question.