We have grown the compound semiconductor ZnO1—xSex by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO1—xSex compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.
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Iwata et al. (2002) studied this question.
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