Pinholes in the insulating layer of magnetic tunnel junctions are local shortcuts and cause malfunction of such devices. The need for reduction of the tunnel resistance by reduction of the insulator thickness will make this problem even more severe. Therefore, the development of low-resistance magnetic tunnel junctions requires analyzing the pinhole density. We developed a method for pinhole imaging using electrodeposition of copper. Selective nucleation at pinholes produces characteristic structures that can be visualized by conventional microscopy techniques. The experimental conditions were carefully chosen in order to avoid uncontrolled damage of the insulator layer.
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Schad et al. (2000) studied this question.
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