We report the results of a systematic study of the Schottky barrier heights on n-type InP (110). The measurements were performed on thick diodes and thin metal overlayers grown at room temperature under ultrahigh vacuum conditions on cleaved surfaces. A large number of metals, ranging from strongly reactive Ni, Al, Cr, Mn, and Pd to less reactive or nonreactive Ag, Au, Cu, Ga, and Sn have been used to correlate the barrier height with the interfacial chemistry. The barrier heights have been determined using the current-voltage characteristics of diodes and the band bending related shifts in the core level spectra for the thin overlayers. Soft x-ray photoemission spectroscopy has also been used to characterize the chemical reactions on a microscopic scale during the initial stages of the interface formation. Our results show several notable exceptions from the systematics relating the barrier heights with the interfacial chemistry. These results provide a critical test of currently considered models of Schottky barrier formation.
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Kendelewicz et al. (1985) studied this question.