Heterovalent-Doped Sb2S3 Glass for Large-Area Sensitive X-ray Detection and Imaging

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Flat-panel X-ray detectors are indispensable in a variety of imaging applications ranging from medical radiography to industrial inspections. Current commercial detectors (α-Se/CdTe) suffer from unsatisfactory image contrast and high-dose X-ray exposure owing to the limited attenuation and charge collection. Here, we show that heterovalent-doped Sb 2 S 3 glass (α-Sb 2 S 3 ) can effectively convert X-ray photons to electrical current signals. SnI 2 doping modifies the Sb–S network and stabilizes the noncrystalline structure, enabling bulk α-Sb 2 S 3 with a narrow bandgap (1.66 eV), large mobility-lifetime product (5.6 × 10 –5 cm 2 V –1 ), and strong radiation attenuation capacity simultaneously. The α-Sb 2 S 3 -based detector exhibits a high sensitivity of 4397 μC Gy 1– cm –2, a low detection limit of 66 nGy s –1, and excellent stability. Thermally evaporated α-Sb 2 S 3 on a pixelated thin film transistor (TFT) backplane enables high-resolution X-ray imaging. This is the first demonstration of Sb 2 S 3 -based X-ray detection and imaging, creating new possibilities for the development of amorphous semiconducting materials and devices.