We obtained preferentially (220)-oriented yttria-stabilized zirconia (YSZ) buffer layers on glass substrates by pulsed laser deposition. These preferentially (220)-oriented YSZ buffer layers enabled us to grow preferentially (100)-oriented Sr Ru O 3 bottom electrodes. On the preferentially (100)-oriented Sr Ru O 3 bottom electrodes, we obtained preferentially c -oriented Pb Zr 0.48 Ti 0.52 O 3 (PZT) thin films, which were confirmed by an X-ray diffraction experiment. The highly c -oriented PZT thin films exhibited a high ferroelectric polarization of about 32 μ m ∕ cm 2 . We also checked a high storage density of about 10 Tbit ∕ in 2 with a minimum bit size below 8 nm with the highly c -oriented PZT thin films by electric force microscope.
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Son et al. (2009) studied this question.
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