Si was irradiated with 1.5-MeV electrons at 0.5 K. Changes in ac conductivity were dependent upon the dopant in the Si. No significant recovery of ac conductivity was observed with annealing up to 300 K. These results are consistent with previously published results at 1.6 K. These data support the suggestion that athermal migration of the Si interstitial occurs.
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Gwozdz et al. (1972) studied this question.
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