We introduce a compound-semiconductor-based omnidirectional reflector. A four-layer-pair stack of GaAs/AlAs was grown epitaxially using molecular-beam epitaxy, and was then converted to a GaAs/Al2O3 multilayer stack by selective oxidation of the AlAs layers. The resultant one-dimensional photonic crystal exhibited omnidirectional reflection properties in near-IR wavelength range below 1 μm. Reflectance spectra measured at various incidence angles and polarizations were observed to be in good agreement with theoretically simulated results.
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Park et al. (2003) studied this question.
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