Periodic mode shift in vertical cavities grown by molecular beam epitaxy

We demonstrate a spatially-chirped resonant wavelength in vertical cavities grown by molecular beam epitaxy (MBE). The wavelength shift is achieved by varying the GaAs growth rate across the wafer using backside temperature patterns. We have demonstrated, for the first time, 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities. The measured rate of mode shift is 5.3 nm/mm. Patterns transfer with a resolution on the millimeter scale.>