Real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystalline thins films prepared by plasma-enhanced chemical vapor deposition onto Si substrates. RTSE shows that a significant volume fraction of nondiamond (or sp²-bonded) carbon forms during thin film coalescence and is trapped near the substrate interface between ~300 diamond nuclei. Although this behavior is observed over a range of CH₄/H₂/O₂ gas compositions, the interfacial sp²-bonded carbon volume can be minimized by operating just within the growth-etch boundary of the diamond growth phase diagram.
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Hong et al. (1995) studied this question.
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