High-performance nanowire complementary metal-semiconductor inverters

We demonstrated the construction of complementary metal-semiconductor (CMES) inverters with single n- and p-type nanowires (NWs) on the same chip. A single p-type NW was assembled by the side of an n-type NW via the electric field assembly method. n- and p-channel metal-semiconductor field-effect transistors were fabricated with n- and p-type NWs, respectively. Based on this, high-performance NW CMES NOT logic gate (inverter) was built. The NW CMES inverters have low operating voltage (≤2 V), high voltage gain (≥7), and low static power dissipation (≤0.3 nW).