Deep Level Transient Spectroscopy (DLTS) has been applied for the first time to high-purity germanium p-i-n diodes. Using the correlator technique, a large number of peaks due to acceptor levels in the forbidden band have been observed. The levels due to substitutional copper, to copper-hydrogen complexes and to divacancy-hydrogen defects have been positively identified. Several unknown levels have been discovered. The results obtained with DLTS are in excellent agreement with results from Hall-effect measurements. DLTS is the perfect tool to follow the creation and annealing of radiation defects.
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E. E. Haller (1979) studied this question.
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