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A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies.
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Stock et al. (2001) studied this question.
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